Method for forming barrier metal of semiconductor device

摘要

A method for forming a barrier metal of a semiconductor device includes forming an insulating layer on a semiconductor substrate and forming an opening in the insulating layer and forming a TiSiN layer having a desired thickness by repeatedly performing a process of forming a TiSiN layer having an atomic layer thickness in a reaction chamber. The process of forming a TiSiN layer having an atomic layer thickness includes performing deposition of a SiH₄ layer inside the opening and on the insulating layer using an atomic layer deposition process, discharging a gas remaining in the reaction chamber by using an inert gas, performing deposition of a certain precursor layer on the SiH₄ layer, and discharging a gas of precursor material remaining in the reaction chamber by using an inert gas. The method of forming a barrier metal further includes performing plasma processing for the TiSiN layer so as to remove impurities contained in the TiSiN layer.