Transistor component for complementary MOS logic circuit, has substrate connecting contact arranged in substrate connecting region for conductively connecting substrate connecting region to supply voltage lead

摘要

Component has a substrate connecting region (7) arranged in a substrate (S) inside or outside a well and highly doped for conductivity type of surrounding semiconductor material. A substrate connecting contact (8) is arranged in the substrate connecting region for conductively connecting the substrate connecting region to a supply voltage lead. An electrical connection is provided between the supply voltage lead and a source region. A contact region is separated from the substrate connecting region by a more lightly doped semiconductor material.