Trench transistor, e.g. magnetoresistive transistor, for e.g. memory chip, has mesa region between marginal trenches, and marginal electrode structure set to potential lying between drain and source potentials, or to source potential

摘要

A transistor has a marginal trench structure below a marginal electrode structure and/or electrical marginal conducting structure. A mesa region (17) is provided between marginal trenches. A marginal electrode structure (16) isolated against a semiconductor body is embedded in the trench structure. The structure (16) is set to a potential, which lies between a drain potential and a source potential, or to the source potential. An independent claim is also included for a semiconductor component comprising a semiconductor body.