| 摘要 |
<p>A method for forming a mask pattern for an ion implantation process is provided to increase reliability of the ion implantation process by forming a barrier layer on a photoresist pattern. A gate line pattern(123-1) is formed on a semiconductor substrate with a device isolation film. A photoresist layer is formed on the entire surface of the gate line pattern. A photoresist pattern(125-1) is formed between the gate line patterns through an exposure and a development process. Then, the photoresist pattern is subjected to an over-descum process. A RELACS layer(131) is formed on the photoresist pattern and the gate line pattern, and is baked to form a barrier layer(133) on a surface of the photoresist pattern. The RELACS layer is removed through the exposure and the development process.</p> |
