NON-VOLATILE MEMORY DEVICE HAVING FIN SHAPED ACTIVE REGION AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device having a fin-type active region is provided to prevent an interconnection layer connected to a source/drain region from being connected to a lower sidewall of an active region by forming a sidewall passivation layer on the sidewall of a pin-type active region in which the source/drain region is formed. An isolation layer is formed in a semiconductor substrate. A pin-type active region(12) is formed between the isolation layers. A wordline(WLn) has a surface confronting the sidewall of the active region, passing through a portion over the active region. A source/drain region(21s,21d) is formed in the active region. An interlayer dielectric comes in contact with the upper surface of the active region. A sidewall passivation layer comes in contact with the sidewall of the active region in which the source/drain region is formed. The sidewall passivation layer is an insulation layer having etch selectivity with respect to the interlayer dielectric. The interlayer dielectric includes an etch blocking layer which comes in contact with the upper surface of the active region and has etch selectivity with respect to the isolation layer. The sidewall passivation layer is an isolation layer in contact with the etch blocking layer.