METHOD FOR FORMING A CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a contact hole of a semiconductor device is provided to prevent a lifting phenomenon between a hard mask and an interlayer dielectric film by forming the hard mask using an SRON film. A substrate(10) having a base layer is prepared, and an insulation film is formed on the substrate to cover the base layer. A hard mask(15) is formed on the insulation film by using an SRON film(18). A photoresist pattern is formed on the hard mask. Then, the hard mask is etched through a first etching process using the photoresist pattern. The insulation film is etched through a second etching process using the photoresist pattern to form a contact hole, through which the base layer is partially exposed.