发明名称 SEMICONDUCTOR DEVICE FABRICATION METHOD
摘要 A method for fabricating a semiconductor device is provided to avoid a peel-off phenomenon or scratching defects that differs in more than one layer on a substrate because of residual particles by eliminating the particles attached to the back surface of the substrate before a thin film is polished. A thin film is formed on the upper surface of a substrate, made of a conductive material used as electrically interconnection wires. The back surface of the substrate is polished by using a polishing solution containing resin particles on which functional groups exist(S122). The thin film formed on the upper surface of the substrate is polished.
申请公布号 KR20060134823(A) 申请公布日期 2006.12.28
申请号 KR20060055763 申请日期 2006.06.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUKUSHIMA DAI;MINAMIHABA GAKU;YANO HIROYUKI
分类号 H01L21/304 主分类号 H01L21/304
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