| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize SiP, has normal probe functions, probe card functions and the like, and can be reduced in size and responsive to high frequency. SOLUTION: The semiconductor device 1 is provided with a plurality of metal needles 3, in order to have probe functions, and a multilayer substrate 5, layered in multiple layers with low temperature calcination ceramics (LTCC). The multilayer substrate 5 has a rectangular parallelepiped geometry, and a plurality of metal needles 3 are attached to one side face 5a of it. The semiconductor device 1 comprises a chip 7 as a semiconductor element and a passive element 9 as a semiconductor element, and the chip 7 and the passive element are loaded on the multilayer substrate 5. Inside the multilayer substrate, wires 11 electrically connecting the metal needles 3 and the chip 7 are provided. COPYRIGHT: (C)2007,JPO&INPIT
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