| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode having a current block structure and its manufacturing method. <P>SOLUTION: The light emitting diode comprises a board, an epitaxial structure installed on the board, a resistive contact electrode provided on the epitaxial structure, and the current block structure installed in the epitaxial structure. The epitaxial structure is composed of a lower cladding layer, an upper cladding layer, a light emitting layer interposed between the upper cladding layer and the lower cladding layer, a window layer provided on the upper cladding layer, and a contact layer provided between the window layer and the resistive contact electrode. The current block structure can be extended from the lower surface of the resistive contact electrode to the light emitting layer. The current block structure is formed by injecting protons into the epitaxial structure by an injection technique. <P>COPYRIGHT: (C)2007,JPO&INPIT |
