发明名称 INFRARED INSPECTION DEVICE AND INFRARED INSPECTION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an infrared inspection device which can appropriately detect micro anomaly at the end of a test object, when infrared rays are given to the test object and the transmitting light is observed so as to detect abnormal portion of the test object. <P>SOLUTION: The infrared inspection device is provided with an infrared light source to emit infrared rays to a test object; an infrared lens for condensing the infrared rays transmitted through the test object; an infrared camera which receives the infrared rays condensed by the infrared lens, converts them into electrical signals, and outputs them; a monitor which inputs the electrical signals output from the infrared camera, converts them into image signals, and displays an image on the basis of the image signal; and an infrared ray leakage preventing member which is provided on at least either of an optical path between the infrared light source and the periphery of the test object, and that between the periphery of the test object and the infrared lens and which blocks the arrival of the infrared ray from the infrared light source to the infrared lens, without transmitting through the test object. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006351669(A) 申请公布日期 2006.12.28
申请号 JP20050173423 申请日期 2005.06.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUMOTO NORIHISA;MATSUNO SHIGERU
分类号 H01L21/66;G01N21/956 主分类号 H01L21/66
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