| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain a large readout signal even in the case in which a plurality of TMRs of a data transfer line are connected and implement high speed operation and high density. SOLUTION: A magnetic storage device comprises a plurality of memory cells in which a nonmagnetic substance insulating film 252 is formed between a first magnetic substance 251 and a second magnetic substance 253, and a data transfer line electrically commonly connected to the first magnetic substance 251 of the plurality of memory cells. The plurality of memory cells are formed at a position where the data transfer line and a plurality of data selecting lines are crossed. The curvature radius of concavity and convexity formed on one surface of the nonmagnetic substance insulating film 252 is formed such that it is smaller than the average film thickness of the nonmagnetic substance insulating film 252. COPYRIGHT: (C)2007,JPO&INPIT
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