| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor in a highly reliable dual gate structure by ensuring desired transistor performance, e.g., a threshold voltage by forming gate electrodes of a PMOS transistor and an NMOS transistor from different metal materials. SOLUTION: A semiconductor device 1 comprises a first conductive MOS transistor, and a second conductive MOS transistor of which the conduction type is reverse to the first conduction type on a semiconductor substrate 11. The first gate electrode 25 of the first conductive MOS transistor is comprised of a metal film, and a second gate electrode 26 of the second conductive MOS transistor is comprised of a metal silicide film. COPYRIGHT: (C)2007,JPO&INPIT
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