| 摘要 |
PROBLEM TO BE SOLVED: To obtain highly reliable semiconductor device by preventing the deterioration of a holding characteristic of a memory cell including a trap film. SOLUTION: An ONO film 102 for accumulating charges is formed on a p-type semiconductor substrate 101. Subsequently, an aperture is formed to the ONO film 102, and an arsenic ion is injected to the semiconductor substrate 101 from the formed aperture in order to form an n-type diffusing layer 104 to the lower part of each aperture of the semiconductor substrate 101. In addition, a silicon oxide film 106 is formed on the surface of end of the aperture of the ONO film 102 by conducting heat treatment to the semiconductor substrate 101 in an atmosphere including an oxygen and halogen compound, and a bit line oxide film 107 is simultaneously formed to the upper part of each n-type diffusing layer 104 by oxidizing the upper part of the n-type diffusing layer 104. Subsequently, a word line 108 is formed by forming a conductive material film on the ONO film 102. COPYRIGHT: (C)2007,JPO&INPIT
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