发明名称 |
COMPOSITE GATE STRUCTURE IN AN INTEGRATED CIRCUIT |
摘要 |
An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal gate on the high-k gate dielectric. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. The first metal gate and the second metal gate have different work functions. The gate stack of the third MOS device includes a silicon gate over a gate dielectric. The silicon gate is preferably formed over the gate stacks of the first MOS device and the second MOS device.
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申请公布号 |
US2006289920(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20050158764 |
申请日期 |
2005.06.22 |
申请人 |
WU I-LU;CHEN KUANG-HSIN;HAN LIANG-KAI |
发明人 |
WU I-LU;CHEN KUANG-HSIN;HAN LIANG-KAI |
分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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