| 发明名称 |
METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD |
| 摘要 |
The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one -Si-C<SUB>n</SUB>-Si chain where n=l. |
| 申请公布号 |
WO2006136741(A1) |
申请公布日期 |
2006.12.28 |
| 申请号 |
WO2006FR01495 |
申请日期 |
2006.06.21 |
| 申请人 |
L'AIR LIQUIDE S.A. DIRECTION DE LA PROPRIETE INTELLECTUELLE;DUSSARRAT, CHRISTIAN |
发明人 |
DUSSARRAT, CHRISTIAN |
| 分类号 |
C23C16/32;C23C16/40;H01L21/314;H01L21/316 |
主分类号 |
C23C16/32 |
| 代理机构 |
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