| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device where take-out efficiency of light is improved. <P>SOLUTION: The light emitting device is provided with a GaN substrate 1; and an n-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 3, a p-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 5 positioned farther than n-type Al<SB>x</SB>Ga<SB>1-x</SB>if viewed from the GaN substrate 1, and a quantum well (MQW4) positioned between the n-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 3 and the p-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 5 on a side of a first main surface of the GaN substrate 1. In the light emitting device, the side of the p-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 5 is mounted downward and light is emitted from a second main surface 1a on the opposite side of the first main surface of the GaN substrate 1. The second main surface 1a of the GaN substrate 1 comprises a region where concavo-convex parts are formed. The light emitting device is provided with an n-electrode 11 formed on the second main surface 1a of the GaN substrate 1, and a protection film 30 formed to cover a side wall of the n-electrode 11. <P>COPYRIGHT: (C)2007,JPO&INPIT |
