| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal CCD saturation level measuring method in a CCD solid-state image sensing device. SOLUTION: The horizontal CCD saturation level measuring method of the solid-state imaging device comprises a semiconductor substrate; a well formed in the vicinity of a front surface thereof; a plurality of charge storage regions formed in the well in a matrix form for storing a signal charge; a vertical CCD formed along rows thereof for transferring the signal charge read in the charge storage regions in columns; a horizontal CCD coupled at ends thereof for transferring the signal charge transferred from the vertical CCD in rows; and a charge detection circuit connected to an output end thereof. The horizontal CCD saturation level measuring method further comprises steps of (a) causing light to be incident on the charge storage regions regarding the charge of the well as a first charge, and reading out a signal charge indicating the stored first image signal in the vertical CCD; (b) transferring the signal charge indicating the first image signal from the vertical CCD to the horizontal CCD by adding for the plurality of the charge storage regions; (c) detecting the overflow of the signal charge indicating the first image signal as a signal charge indicating a second image signal. COPYRIGHT: (C)2007,JPO&INPIT
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