| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method capable of reducing any breakage or crystal defect arising on a semiconductor substrate. SOLUTION: The heat treatment method takes out the pre-warpage amount of a wafer prior to the wafer heating (S3), heats the wafer to a primary temperature (S4), measures the post-warpage amount of the wafer during or after the wafer heating (S4), calculates the difference between the post-warpage amount and pre-warpage amount of the wafer, compares this difference between the two warpage amounts to the allowable upper limit value (S6), and heats the wafer to a secondary temperature rather than the primary temperature if the difference between the two warpage amounts is not more than the allowable upper limit value (S12). COPYRIGHT: (C)2007,JPO&INPIT
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