| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which adhesiveness between an insulating material and a wiring material and characteristics such as mechanical strength are improved by using an insulating film made of a borazine based compound, and its manufacturing method. SOLUTION: The semiconductor device includes a first insulating layer in which a first conductor layer is embedded into a recess, an etching stopper layer formed on the first insulating layer, a second insulating layer formed on the etching stopper layer, a third insulating layer formed on the second insulating layer, and a second conductor layer embedded into a recess between the second/third insulating layers. The second/third insulating layers are formed by a chemical vapor-phase reaction growth method by using a carbon-containing borazine compound as a material. A carbon content of the third insulating layer is smaller than that of the second insulating layer. COPYRIGHT: (C)2007,JPO&INPIT
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