MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device for fully removing particles and an oxide-based residue remaining on the surface after trench etching in a manufacturing process of the silicon carbide semiconductor device having fine trench type MOS gate structure. SOLUTION: In the manufacturing method of the semiconductor device, a surface treatment process for etching the surface of a semiconductor substrate by approximately several nm to 0.1μm by the supply of hydrogen in a decompressed reactor at a temperature of 1,500°C or higher before a process for forming a gate oxide film on a silicon carbide semiconductor substrate. COPYRIGHT: (C)2007,JPO&INPIT