| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor single crystal, which can easily control the hydrogen atom concentration in a hydrogen mixed gas corresponding to the change of pulling environment of the semiconductor single crystal and can continuously and stably feed the hydrogen mixed gas for a long period of time by using low-cost apparatus. SOLUTION: A hydrogen mixed gas feeding unit 12 has a hydrogen-containing gas feeder 51, an inert gas feeder 52 and a buffer tank 58. The feeder 51 is constituted of a source 51a of the hydrogen-containing gas and a purifier 51b for purifying the hydrogen-containing gas. In a hydrogen-containing gas flow rate controller 54, the flow rate is set by a control section 13 for controlling the operation of the whole apparatus 10 for manufacturing a silicon single crystal. COPYRIGHT: (C)2007,JPO&INPIT
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