| 摘要 |
A semiconductor light emitting device including a substrate, a semiconductor light emitting stack, a first electrode, a first transparent oxide conductive layer and a second electrode is provided. The semiconductor light emitting stack is disposed on the substrate and has a first surface region and a second surface region. The first electrode is disposed on the first surface region. The first transparent oxide conductive layer is disposed on the second surface region. The second electrode is disposed on the first transparent oxide conductive layer. The area of the light emitting device is larger than 2.5x10<SUP>5 </SUP>mum<SUP>2</SUP>, and the distance between the first electrode and the second electrode is between 150 mum and 250 mum essentially, and the area of the first electrode and the second electrode is 15%~25% of that of the light emitting layer.
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