发明名称 |
Methods of fabricating p-type transistors including germanium channel regions and related devices |
摘要 |
A method of fabricating a transistor device includes forming a non-crystalline germanium layer on a seed layer. The non-crystalline germanium layer is selectively locally heated to about a melting point thereof to form a single-crystalline germanium layer on the seed layer. The non-crystalline germanium layer may be selectively locally heated, for example, by applying a laser to a portion of the non-crystalline germanium layer. Related devices are also discussed.
|
申请公布号 |
US2006292880(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20060447436 |
申请日期 |
2006.06.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
SON YONG-HOON;SHIN YU-GYUN;LEE JONG-WOOK |
分类号 |
H02N6/00;H01L21/302 |
主分类号 |
H02N6/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|