发明名称 |
SEMICONDUCTOR DEVICE WITH RELATIVELY HIGH BREAKDOWN VOLTAGE AND MANUFACTURING METHOD |
摘要 |
A semiconductor device includes at least one active component (18) having a p-n junction (26) on the semiconductor substrate in an active region (19) of the semiconductor substrate (4). A shallow trench isolation pattern is used to form a plurality of longitudinally extending shallow trenches (12) containing insulator (14). These trenches define a plurality of longitudinal active stripes (10) between the shallow trenches (12). The shallow trench isolation depth (dsp) is greater than the junction depth (dsO of the longitudinal active stripes and the width (wsO of the active stripes (10) is less than the depletion length (ldepi) of the p-n junction. |
申请公布号 |
WO2006136979(A2) |
申请公布日期 |
2006.12.28 |
申请号 |
WO2006IB51913 |
申请日期 |
2006.06.14 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;SONSKY, JAN;HERINGA, ANCO |
发明人 |
SONSKY, JAN;HERINGA, ANCO |
分类号 |
H01L29/861;H01L29/06;H01L29/78;H01L29/786 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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