| 摘要 |
PROBLEM TO BE SOLVED: To provide a SONOS device having a new structure by changing a multiple dielectric layer (ONO layer) of a conventional planar SONOS device into a curved shape such as a cylindrical shape, and a method for manufacturing the same. SOLUTION: In the SONOS memory device constituted of a semiconductor substrate 100 having an active region 120 and a field region 200, a source region and a drain region formed on the top of the active region 120 at a certain distance, a multiple dielectric layer 300 including the separation distance and in which a first oxide layer 320a, a nitride layer 340, and a second oxide layer 360 are formed sequentially on a portion of the source region and the drain region, and a gate 400 formed on the top of the multiple dielectric layer 300, the memory is designed so that the surface on the top of the active region 120 has a curved surface shape, the multiple dielectric layer 300 has a curved shape along the shape of the surface of the top of the active region 120, and the gate 400 covers the second oxide layer 360 having the curved shape. COPYRIGHT: (C)2007,JPO&INPIT
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