| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition with which such a film can be formed that is excellent, as a material for an insulating film of a semiconductor device or the like, in a dielectric characteristic after a PCT, a CMP-resisting characteristic after a PCT and a close-contact characteristic with a substrate after a PCT, to provide a method of forming an interlayer insulating film and to provide a silica-based interlayer insulating film produced from the composition. SOLUTION: The composition contains (A) a substance having a radius of inertia of 5 through 50 nm produced by hydrolyzing and condensing, in the presence of water and tetraalkylammonium hydroxide, at least one of the compounds represented below by formulae (1) and (2), wherein the formula (1) is R<SB>a</SB>Si(OR<SP>1</SP>)<SB>4-a</SB>, in which R stands for a hydrogen atom, a fluorine atom, or a monovalent organic group, R<SP>1</SP>does for a monovalent organic group, and a does for an integer from 0 through 2; and the formula (2) is R<SP>3</SP><SB>b</SB>(R<SP>4</SP>O)<SB>3-b</SB>Si-(R<SP>7</SP>)<SB>d</SB>-Si(O<SP>5</SP>)<SB>3-c</SB>R<SP>6</SP><SB>c</SB>, in which R<SP>3</SP>through R<SP>6</SP>stand for organic groups that are the same or different and respectively monovalent, b and c stand for the same or different numbers from 0 through 2, R<SP>7</SP>stands for an oxygen atom, a phenylene group, or a group represented by -(CH<SB>2</SB>)<SB>n</SB>- with n denoting an integer from 1 through 6, and d stands for 0 or 1; and (B) an organic solvent. COPYRIGHT: (C)2007,JPO&INPIT
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