| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for suppressing any charge damage from being applied to a gate insulating film even when dry etching for wiring formation is advanced. SOLUTION: The method comprises a step for forming gate insulating films 3a and 3b, a step for forming gate wiring 4a and 4b, a step for forming an insulating film 8, a step for forming connection holes 8a, 8b and 8c, a step for embedding conductors 9a, 9b and 9c in the connection holes 8a, 8b and 8c, a step for forming conductive films 11, 12 and 13 on the insulating film 8 and the conductors 9a, 9b and 9c, and a step for forming a plurality of wiring 10a, 10b and 10d and dummy wiring 10c on the insulating film 8 by patterning the conductive films 11, 12 and 13 by using dry etching. An interval between the dummy wiring 10c and the wiring 10b which is the closest to the dummy wiring 10c is set so as to be not more than the mutual intervals of the wiring 10a, 10b and 10d. COPYRIGHT: (C)2007,JPO&INPIT
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