| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which can reduce GIDL (Gate-Induced Drain Leakage), while suppressing the degradation of ON-current. SOLUTION: The field effect transistor comprises a semiconductor layer, projecting from a base plane to the upper part, a gate electrode formed on the both sides of this semiconductor layer, a gate insulating film which is interposed between this gate electrode and the sides of the semiconductor layer, a source/drain region where a first electric conduction type impurities are implanted into the semiconductor layer, and a channel forming region, put in between the above source/drain regions of the semiconductor layer. The field effect transistor has regions where the first conductivity-type impurities with the concentration gradient of the direction of the channel length which is more gradual than the concentration gradient of the direction of channel length of the first conductivity-type impurities, in a part for the lower part, are implanted into the semiconductor layer upper part in source/drain region. COPYRIGHT: (C)2007,JPO&INPIT
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