| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same which can be easily incorporated in a CMOS process, and is provided with a diode that permits comparatively large current, even in a small area and is superior in low-leakage performance. SOLUTION: When a plurality of well regions are formed in a p-type substrate 11, either of them is used as a well region (n-type) 121d for diode. Next, a p-type diode base region 162 is formed within the well region 121d for diode simultaneously, when an inversion preventing layer 161 is formed. Then, a field oxide film 19 is formed. N-type first and second electrode diffusion layers 221 and 222 and a p-type third electrode diffusion layer 23 are formed in the same step as that at the time, when an n-channel or p-channel MOSFET source/drain region is formed. Wiring to be connected to the first electrode diffusion layer is formed to form a cathode terminal KT, while wiring to be commonly connected with the second and third electrode diffusion layers 222 and 23 is formed to form an anode terminal AT. COPYRIGHT: (C)2007,JPO&INPIT
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