| 摘要 |
The barrier phi<SUB>b </SUB>between the Fermi level Ef of Se and the valence band of the wide band gap p-type semiconductor becomes the lowest by including the Se layer in the p-type ohmic electrode, and an ohmic contact is achieved that has a resistance far lower than that obtained when the metal layer having high work function of prior art is arranged on the wide band gap p-type semiconductor.
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