| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to avoid a leakage current flowing along a damaged part of a semiconductor substrate by effectively removing various kinds of foreign substances on a semiconductor substrate while eliminating a plurality of silicon dangling bonds and a damaged semiconductor substrate by the silicon dangling bonds when the semiconductor substrate is etched to form a trench. A pad layer is formed on a semiconductor substrate(100). A photoresist layer pattern for defining an isolation layer formation region is formed on the pad layer. The pad layer is patterned by using the photoresist layer pattern as a mask. The semiconductor substrate is etched to form a trench(108) by using the patterned pad layer as a mask. The photoresist layer pattern is removed. A first cleaning process is performed on the semiconductor substrate from which the photoresist layer pattern is removed so that a residual photoresist layer is removed. The CD(critical dimension) of the trench is measured from the firstly cleaned semiconductor substrate. A second cleaning process is performed on the semiconductor substrate to remove foreign substances attached to the semiconductor substrate. The second cleaning process includes the following steps. The semiconductor substrate is cleaned in a mixture solution of sulfuric acid and hydrogen peroxide. The semiconductor substrate is cleaned in a mixture solution of ammonium hydroxide, hydrogen peroxide and water. The semiconductor substrate is cleaned in a mixture solution of hydrochloric acid, hydrogen peroxide and water.
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