| 摘要 |
PROBLEM TO BE SOLVED: To highly precisely inspect the thickness of a deposited film on a wafer under manufacture in manufacturing semiconductor devices, imaging devices, display devices, or the like. SOLUTION: A semiconductor wafer or a similar element for the inspection is loaded in an apparatus consisting of a focused ion beam apparatus and a scanning transmission electron microscope, and a test piece is cut out from the wafer by a focused ion beam. The cut out test piece is loaded on an observation holder, and is made thin-filmed. The thickness of a film in the thin-filmed test piece is measured by the scanning transmission electron microscope. COPYRIGHT: (C)2007,JPO&INPIT
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