| 摘要 |
PROBLEM TO BE SOLVED: To prevent effectively a warp of a substrate so as to provide a good-quality silicon TFT, and to provide a method of fabricating a good-quality silicon TFT. SOLUTION: The silicon thin-film transistor is provided with buffer layers 11a, 11b formed on both surfaces of a substrate, on the buffer layer 11a on one side being arranged a silicon channel, on which is formed a gate insulation layer 13, and on which a gate 14 is provided. By this arrangement, the substrate is prevented from being warped, thereby providing a good-quality operational performance. COPYRIGHT: (C)2007,JPO&INPIT
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