SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To solve the problem of fluctuation in compound defects caused a difference in the concentration of impurities contained intrinsically for each semiconductor device, resulting in fluctuation in characteristics of the semiconductor device. SOLUTION: The method manufactures a PIN type diode 10 comprising an intermediate semiconductor region 24 where a compound defect 46 is formed. It includes a process for introducing impurities of the same kinds as the impurities (for example, carbon) that are intrinsically contained in the intermediate semiconductor region 24 into the intermediate semiconductor region 24, and a process for radiating the intermediate semiconductor region 24 with helium ions to form a point defect 44. COPYRIGHT: (C)2007,JPO&INPIT