| 摘要 |
Electrode layers ( 1, 2 ) are arranged on both sides of a dielectric layer ( 3 ) facing each other so as to configure a capacitor. Lead electrodes ( 4, 5 ) are formed in the electrode layers ( 1, 2 ). A penetrating electrode ( 6 ) that is insulated from the electrode layers ( 1, 2 ) is formed. An electronic component ( 10 ) configured in this manner is mounted on a wiring board, and a semiconductor chip can be mounted thereon. Along with connecting the semiconductor chip to the wiring board via the penetrating electrode ( 6 ), the semiconductor chip or the wiring board is connected to the lead electrodes ( 4, 5 ). In this manner, while suppressing the size increase of a mounted area, the capacitor or the like can be arranged near the semiconductor chip. Thus, the semiconductor chip is driven with high frequency more easily. |
