| 摘要 |
A memory device using a polylthiophene-based derivative is provided to enable migration of electrons by making a thiophene-based derivative and POTB(poly(3-octylthiophene-co-3-(3-thienyl)benzonitrile)) as a copolymer of the thiophene-based derivative have a conjugated structure. A memory device includes an OBD(organic electrical bistable device) composed of a three-layered structure of organic, metal and organic such that the OBD is formed between a cathode and an anode. A heterocyclic thiophene derivative or its copolymer is used as the organic material. The heterocyclic thiophene derivative and the copolymer can be poly(3-octylthiophene-co-3-(4-fluorophenyl))thiophene.
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