| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved memory cell array comprising a trench capacitor, and an improved method to form it. <P>SOLUTION: A gate electrode 85 is provided during formation of a transistor, which is performed after an element separation trench 2 and an corresponding active region are formed. That process includes a process to etch an insulating material which adjoins a channel in the element separation trench 2, preventing a part of the channel from being covered. A channel part 11 is ridge-shaped to comprise one top surface 11a and two side surfaces 11b. There are further provided a process for providing a gate insulating layer 84 to the channel part 11, and a process for providing a conductive material 85 on the gate insulating layer 84. The process of etching the insulating material in the element separation trench 2 is so performed as the insulating material is locally etched. The insulating material at the upper part of an insulating groove which separates the active regions from each other is held. <P>COPYRIGHT: (C)2007,JPO&INPIT |
