| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition capable of suppressing occurrence of nano edge roughness and efficiently, inexpensively and easily forming a fine and high-definition resist pattern, to provide a method for forming a resist pattern using the above resist composition, capable of efficiently, inexpensively and easily forming a fine and high-definition resist pattern without producing nano edge roughness which may induce a problem, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: The resist composition contains at least either tannin or its derivative. The method for forming a resist pattern includes steps of forming a resist film from the resist composition on an object surface, and exposing and developing the resist film. The method for manufacturing a semiconductor device includes a resist pattern forming step of forming a resist film from the resist composition on a surface to be processed, and exposing and developing the resist to form a resist pattern, and a patterning step of patterning the object surface by etching using the resist pattern as a mask. <P>COPYRIGHT: (C)2007,JPO&INPIT |
