| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that is high in accuracy and reliability regarding high-level microfabrication. <P>SOLUTION: The solid-state imaging device is provided with an optical conversion section, and a charge transfer section, provided with a charge transfer electrode for transferring charges generated in the optical conversion section. The device is characterized in that a gate oxide film is constituted of a double layer structure of a radical oxide film with low-temperature plasma and a CVD film. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
