| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor easy to be manufactured reduced in the voltage dependence of a capacitance value change. SOLUTION: The capacitor has capacitance elements C<SB>1</SB>-C<SB>4</SB>formed on an insulation film 12 covering the surface of a semiconductor substrate 10. The capacitance element C<SB>1</SB>has a polycide lower electrode layer 24a on a doped polysilicon lower electrode layer 16a through a silicon oxide dielectric layer 18a, and the other capacitance elements C<SB>2</SB>-C<SB>4</SB>have the same constitutions as that of the capacitance element C<SB>1</SB>. The capacitance elements C<SB>1</SB>-C<SB>4</SB>are divided into a first group G<SB>1</SB>including C<SB>1</SB>, C<SB>3</SB>, and a second group G<SB>2</SB>including C<SB>2</SB>, C<SB>4</SB>. In the group G<SB>1</SB>, lower electrode layers 16a, 16c are mutually connected to each other to be a terminal T<SB>1</SB>and upper electrode layers 24a, 24c are connected to each other to be a terminal T<SB>2</SB>. In the group G<SB>2</SB>, upper electrode layers 24b, 24d are connected to the terminal T<SB>1</SB>and lower electrode layers 16b, 16d are connected to the terminal T<SB>2</SB>. COPYRIGHT: (C)2007,JPO&INPIT
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