| 摘要 |
PROBLEM TO BE SOLVED: To clean quickly the inside of a treatment vessel after a film depositing process in a film depositing device wherein a high temperature region and a low temperature region exist in the treatment vessel upon at film depositing processing. SOLUTION: At cleaning the inside of a treatment vessel after depositing a film on a substrate, a temperature of a tubular member for enclosing a treatment atmosphere at a first region of the treatment vessel or at the further inner side than the inner wall of the treatment vessel, for example, is made lower than a temperature at depositing the film to approximate it to the temperature of a second region or the inner wall of the treatment vessel, for example. Then cleaning gas is supplied into the treatment vessel after reducing a temperature difference in a cleaning region of the treatment vessel by this operation. By this operation, a thin film in the treatment vessel comprising the thin film adhered to the first region and the second region can be removed quickly whereby a time necessary for the cleaning can be shortened. COPYRIGHT: (C)2007,JPO&INPIT
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