| 摘要 |
PROBLEM TO BE SOLVED: To simplify a structure of a junction type field effect transistor. SOLUTION: The junction type field effect transistor formed on a semiconductor substrate 100 is constituted with inclusion of a source region 101, a drain region 102, a channel region 103 formed between the source region 101 and the drain region 102, and a gate region 107 formed under at least the channel region 103. The channel region 103 forms a part of the surface of semiconductor substrate 100 with its upper surface. COPYRIGHT: (C)2007,JPO&INPIT
|
