发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To ensure high yield and enhance reliability by preventing a via from becoming high resistance. SOLUTION: A semiconductor device includes a via 1 formed on a substrate; wiring 2 connected with the via 1 and extending in a predetermined direction; an insulating film 5 formed to surround side surfaces of the wiring 2; and an electrically floating conductive film 3a formed at a portion corresponding to an edge of a locus of a circle, when the circle centered at an arbitrary point on a center line P1 extending in a predetermined direction of the wiring 2 in the insulating film 5, and having a radius twice a via diameter W operates from one end of the center line P1 to the other end. An area of a portion of areas of upper surfaces of the wiring 2 and the conductive film 3a, the portion being existent in the locus of the circle is 50% or more of the area of the locus of the circle. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006351690(A) 申请公布日期 2006.12.28
申请号 JP20050173666 申请日期 2005.06.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJINAGA KIYOO
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/52;H01L27/04 主分类号 H01L21/3205
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