| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the Q-value of spiral wiring can be enhanced. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 11, an insulator 12 formed on the semiconductor substrate 11, and a spiral winding 13 formed on the insulator 12 wherein at least a partial region of the semiconductor substrate 11 in the thickness direction corresponding at least to a central part surrounded by the wiring 13 is removed (removed region 11c). COPYRIGHT: (C)2007,JPO&INPIT
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