| 摘要 |
A nitride semiconductor LED is provided to improve extraction efficiency of a nitride semiconductor LED by intentionally tilting a sapphire substrate to dice or break. A nitride semiconductor layer is positioned on a sapphire substrate(10), including a buffer layer(11), a first conductive layer(12), an active layer(13) and the second conductive layer(14). A first electrode is formed on the first conductive layer. A transparent electrode(21) and a second electrode(23) are formed on the second conductive layer. The sapphire substrate is tilted to be a pyramid type. A reflection layer is formed on the lower surface of the sapphire substrate. The upper area of the sapphire substrate is greater than the lower surface of the sapphire substrate.
|
