发明名称 Voltage supply circuit and semiconductor memory
摘要 Each of first and second differential amplifiers has a function of increasing a bias current in response to the activation of a drivability control signal. A first driving circuit connects an output node to a high power supply line in response to the activation of an output signal of the first differential amplifier, and connects the output node to a low power supply line in response to the activation of an output signal of the second differential amplifier. Only during the activation period of the drivability control signal, a second driving circuit connects the output node to the high power supply line in response to the activation of the output signal of the first differential amplifier, and connects the output node to the low power supply line in response to the activation of the output signal of the second differential amplifier.
申请公布号 US2006291317(A1) 申请公布日期 2006.12.28
申请号 US20050260196 申请日期 2005.10.28
申请人 FUJITSU LIMITED 发明人 TAKEUCHI ATSUSHI
分类号 G11C5/14 主分类号 G11C5/14
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