| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To disclose a method for determining the electric charge distribution in a memory device of nonvolatile electric charge trapping. <P>SOLUTION: A first electric charge pumping measurement is carried out to a device under a test by using a pulse top level change, and a second electric charge pumping measurement is carried out by using a pulse bottom level change. The obtained data is coupled in order to extract a spatial distribution. This is performed by a relation between an electric charge pumping current Icp and the calculated channel length Lcalc of a semiconductor device, by reconstructing the estimation of the spatial electric charge distribution from an electric charge pumping curve to a plurality of values of the electric charge pumping current Icp. A substantially equal value for the effective channel length Leff of the semiconductor device with the corresponding calculated channel length Lcalc is obtained from the plurality of Icp values. The spatial charge distribution is reconstructed from the electric charge pumping curve by using the obtained Icp value. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
