| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple manufacturing method of a ferroelectric memory apparatus superior in electric characteristic. SOLUTION: A semiconductor substrate 11 is prepared. A first insulating film 30 is formed on the semiconductor substrate. A contact hole 32 is formed. A first precursor conductive hydrogen barrier film 34X covering sides of the first insulating film and the contact hole is formed. A plug film 36X is formed with which the contact hole is filled. The plug film is cut and a plug 36 is formed with which the contact hole is filled. A ferroelectric capacitor structure 40 arranged on the top face of the plug is formed. Heat treatment is performed. A first part region 34Xa is set to be a conductive hydrogen barrier film 34a, and a second part region 34Xb to be an insulating hydrogen barrier film 34b so as to form a hydrogen barrier film 34. COPYRIGHT: (C)2007,JPO&INPIT
|
