| 摘要 |
PROBLEM TO BE SOLVED: To provide a general power amplifier with a high amplification factor. SOLUTION: According to the invention, a high-frequency power amplifier is characterized in that a power transistor is switched in such a way that the transistor is operated in the breakdown region and that a control loop is provided. Charge carriers that are produced in the breakdown region are carried away from an output of the operational amplifier by means of the control loop. The control loop comprises at least one transistor. The transistor of the control loop is connected in parallel with the power transistor. The control loop includes a time constant greater than a time constant of charge carrier multiplication, and operation reliability in the breakdown region is improved by combination with at least one diode (D1, D2). COPYRIGHT: (C)2007,JPO&INPIT
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