SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of preventing the electrical charge transfer via inter-gate insulating films between adjacent transistors. SOLUTION: The semiconductor memory device incorporates a p-type semiconductor layer 20; many floating gate electrodes FG1a to FG7a which are arranged in a matrix pattern via tunnel insulating films 12a to 12g on the p-type semiconductor layer 20; many inter-gate insulating films 14aa to 14ga each of which is only arranged on many floating gate electrodes FG1a to FG7a; many control gate electrodes CG1a to CG7a each of which is only arranged on many inter-gate insulating films 14aa to 14ga; and element separation insulating layers STI which are buried in a region from each of many control gate electrodes CG1a to CG7a to the inside of the p-type semiconductor layer 20, so that many inter-gate insulating films 14aa to 14ga may be separated with each other in a column direction of the matrix. COPYRIGHT: (C)2007,JPO&INPIT